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| EMF5XV6T5 Preferred Devices Power Management, Dual Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Features http://onsemi.com (3) (2) (1) * * * * Simplifies Circuit Design Reduces Board Space Reduces Component Count These are Pb-Free Devices Q1 Q2 R2 Symbol Value Unit (4) Vdc Vdc mAdc 6 1 R1 (5) (6) MAXIMUM RATINGS Rating Q1 (TA = 25C unless otherwise noted, common for Q1 and Q2) Collector-Base Voltage Collector-Emitter Voltage Collector Current Electrostatic Discharge Q2 (TA = 25C) Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Peak Collector Current - Continuous Electrostatic Discharge VCEO VCBO VEBO IC ESD -12 -15 -6.0 -1.0 (Note 1) -0.5 Vdc Vdc Vdc Adc VCBO VCEO IC ESD 50 50 100 HBM Class 1 MM Class B SOT-563 CASE 463A PLASTIC MARKING DIAGRAM HBM Class 3B MM Class C UY M G G THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range 1 Symbol PD 357 (Note 2) 2.9 (Note 2) RqJA 350 (Note 2) mW mW/C C/W Max Unit UY = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) Symbol PD Max 500 (Note 2) 4.0 (Note 2) Unit mW mW/C C/W ORDERING INFORMATION Device EMF5XV6T5 Package SOT-563 (Pb-Free) SOT-563 (Pb-Free) Shipping 8000/Tape & Reel RqJA TJ, Tstg 250 (Note 2) -55 to +150 EMF5XV6T5G C 8000/Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Single pulse 1.0 ms. 2. FR-4 @ Minimum Pad. (c) Semiconductor Components Industries, LLC, 2005 For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. 1 November, 2005 - Rev. 2 Publication Order Number: EMF5XV6T5/D EMF5XV6T5 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2) Characteristic Symbol Min Typ Max Unit Q1 OFF CHARACTERISTICS Collector-Base Cutoff Current Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 3) ON CHARACTERISTICS (Note 3) DC Current Gain Collector-Emitter Saturation Voltage Output Voltage (on) Output Voltage (off) Input Resistor Resistor Ratio (VCE = 10 V, IC = 5.0 mA) (IC = 10 mA, IB = 0.3 mA) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) hFE VCE(sat) VOL VOH R1 R1/R2 80 - - 4.9 32.9 0.8 140 - - - 47 1.0 - 0.25 0.2 - 61.1 1.2 Vdc Vdc Vdc kW (VCB = 50 V, IE = 0) (VCE = 50 V, IB = 0) (VEB = 6.0 V, IC = 0) (IC = 10 mA, IE = 0) (IC = 2.0 mA, IB = 0) ICBO ICEO IEBO V(BR)CBO V(BR)CEO - - - 50 50 - - - - - 100 500 0.1 - - nAdc nAdc mAdc Vdc Vdc Q2 OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage Collector -Base Breakdown Voltage Emitter -Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current ON CHARACTERISTICS DC Current Gain (Note 4) Collector -Emitter Saturation Voltage (Note 4) Base -Emitter Saturation Voltage (Note 4) Base -Emitter Turn-on Voltage (Note 4) Input Capacitance Output Capacitance Turn-On Time Turn-Off Time (IC = -10 mA, VCE = -2.0 V) (IC = -200 mA, IB = -10 mA) (IC = -150 mA, IB = -20 mA) (IC = -150 mA, VCE = -3.0 V) (VEB = 0 V, f = 1.0 MHz) (VCB = 0 V, f = 1.0 MHz) (IBI = -50 mA, IC = -500 mA, RL = 3.0 W) (IB1 = IB2 = -50 mA, IC = -500 mA, RL = 3.0 W) hFE VCE(sat) VBE(sat) VBE(on) Cibo Cobo ton toff 270 - - - - - - - - - -0.81 -0.81 52 30 50 80 680 -250 -0.90 -0.875 - - - - mV V V pF pF ns ns (IC = -10 mAdc, IB = 0) (IC = -0.1 mAdc, IE = 0) (IE = -0.1 mAdc, IC = 0) (VCB = -15 Vdc, IE = 0) (VEB = -6.0 Vdc) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO -12 -15 -6.0 - - - - - - - - - - -0.1 -0.1 Vdc Vdc Vdc mAdc mAdc 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. 4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%. 300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 -50 RqJA = 833C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 Figure 1. Derating Curve http://onsemi.com 2 EMF5XV6T5 TYPICAL ELECTRICAL CHARACTERISTICS FOR Q1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS 10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C -25C 1 TA = -25C 0.1 25C 75C 100 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 1 0.8 C ob , CAPACITANCE (pF) 0.6 0.4 0.2 0 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 100 75C 10 1 0.1 25C TA = -25C 0.01 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 3 EMF5XV6T5 TYPICAL ELECTRICAL CHARACTERISTICS FOR Q2 1 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 1 IC/IB = 100 25C -55C 0.1 IC/IB = 200 100 50 0.1 0.01 10 TA = 125C 0.001 0.001 TA = 25C 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 7. Collector Emitter Saturation Voltage vs. Collector Current 600 hFE, DC CURRENT GAIN 500 125C 400 300 25C 200 TA = -55C 100 0 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) VCE = 1.0 V 1 Figure 8. Collector Emitter Saturation Voltage vs. Collector Current IC/IB = 50 25C 0.1 -55C TA = 125C 0.001 0.01 0.1 1 0.01 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 9. DC Current Gain Figure 10. Collector Emitter Saturation Voltage vs. Collector Current 1.2 TA = 25C VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) 1 -55C 0.8 0.6 0.4 0.2 0 0.001 25C TA = 125C 1 0.9 VCE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 10 mA 5.0 mA 0 0.00001 0.0001 50 mA 500 mA 250 mA 100 mA 0.001 0.01 0.1 1 IC = 1.0 A 0.01 0.1 1 IB, BASE CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 11. Collector Emitter Saturation Voltage vs Base Current Figure 12. Base Emitter Saturation Voltage vs. Collector Current http://onsemi.com 4 EMF5XV6T5 1.2 VBE(on), BASE EMITTER TURN-ON VOLTAGE (V) 1 -55C 0.8 0.6 0.4 0.2 0 0.001 25C TA = 125C VCE = 3.0 V Cibo, INPUT CAPACITANCE 55 50 45 40 35 30 25 20 f = 1 MHz IC = 0 A TA = 25C 0.01 0.1 1 0 1 2 3 4 5 6 IC, COLLECTOR CURRENT (AMPS) VEB, EMITTER BASE VOLTAGE Figure 13. Base Emitter Turn-On Voltage vs. Collector Current Figure 14. Input Capacitance 35 Cobo, OUTPUT CAPACITANCE f = 1 MHz IE = 0 A TA = 25C 30 25 20 15 10 0 2 4 6 8 10 12 14 VCB, COLLECTOR BASE VOLTAGE Figure 15. Output Capacitance http://onsemi.com 5 EMF5XV6T5 PACKAGE DIMENSIONS SOT-563, 6 LEAD CASE 463A-01 ISSUE F D -X- A L 4 6 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 1 2 3 E -Y- HE DIM A b C D E e L HE e b 6 PL 5 0.08 (0.003) C M XY SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.0 0.0394 1.35 0.0531 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 EMF5XV6T5/D |
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